| 摘要 |
An electron-emitting apparatus comprising a substrate, an electron-emitting device comprising a layer structure having a first electroconductive member provided on the surface of the substrate, an insulation layer provided on the first electroconductive member, and a second electroconductive member provided on the insulation layer, an anode electrode provided apart from the surface of the substrate, first voltage application means for applying potential, higher than the potential applied to the first electroconductive member, to the second electroconductive member, and second voltage application means for applying potential, higher than the potential applied to the second electroconductive member, to the anode electrode, wherein <paragraph lvl="0"><in-line-formula>T1<Axexp [Bx(Vf-phiwk)/(Vf)]</in-line-formula>A=-0.50+0.56xlog (T3), B=8.7 where: on the end plane of the insulation layer placed substantially parallel to the surface of the substrate, the end portion of the first electroconductive member and the end portion of the second electroconductive member are set opposite each other with a space between, in a direction of the end portion of the first electroconductive member and the end portion of the second electroconductive member set opposite each other, the second electroconductive film is T1 [nm] long, the first electroconductive member extending from the surface of the first electroconductive member substantially parallel to the surface of the substrate toward the direction in which the end portion of the first electroconductive member and the end portion of the second electroconductive member are set opposite each other is T3 [nm] long, the work function of the second electroconductive member is phiwk [eV], the voltage applied between the first electroconductive member and the second electroconductive member is Vf [V].
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