Semiconductor arrangement used in a solar cell comprises a polycrystalline silicon layer formed by heat treating an amorphous silicon layer in the presence of a metallic catalyst

摘要

Semiconductor arrangement comprises a polycrystalline silicon layer (160) formed by heat treating an amorphous silicon layer (60) in the presence of a metallic catalyst (40) which is distributed point-like in the upper or lower region of the amorphous silicon layer. An Independent claim is also included for a process for the production of a semiconductor arrangement. Preferred Features: The polycrystalline silicon layer has no single crystal silicon layers whose electrical conducting types differ on both sides. The polycrystalline silicon layer is formed from intrinsic polycrystalline silicon.