| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are to preclude damage of an edge portion of a field oxide, thereby preventing generation of a leakage current. CONSTITUTION: An initial oxide and a nitride layer are formed in this order on a semiconductor substrate(31) having an active region and a field region defined therein. The nitride layer and the initial oxide are etched, followed by etching the substrate using the remaining nitride layer and initial oxide as a mask to form a trench therein. An oxide layer is deposited on the entire surface of the substrate, and planarized to form a field oxide(34) only in the trench. On the field oxide is formed an insulating layer pattern(35) with a narrower thickness than that of the field oxide. A gate electrode(38) is formed on an active region, and simultaneously a poly-sidewall(36) is formed at both sides of the insulating layer pattern. A gate oxide(37) is then formed under the gate electrode. Low-concentration Impurity ions are implanted into the substrate at both sides of the gate electrode to form an LDD(lightly doped drain) region(39). Thereafter, sidewall spacers are simultaneously formed at both sides of the gate oxide and the gate electrode and at both sides of the poly-sidewall.
|
