发明名称 |
Plasma processing apparatus and method |
摘要 |
A plasma processing apparatus and a plasma processing method for processing a wafer of a large diameter to produce a high speed semiconductor circuit at a high yield are provided. A thickness of an insulating film formed on a surface of an electrode opposing to a substrate to be processed is locally changed, an electrode is provided in the insulating film and a bypassed bias current is supplied to the electrode. An electrode is provided in an insulating film on a surface of the electrode opposing to a material adjacent to the substrate to be processed and a bypassed bias current is supplied to the electrode.
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申请公布号 |
US2001019881(A1) |
申请公布日期 |
2001.09.06 |
申请号 |
US20010795487 |
申请日期 |
2001.03.01 |
申请人 |
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发明人 |
OHMOTO YUTAKA;KAWAHARA HIRONOBU;YOSHIOKA KEN;TAKAHASHI KAZUE;KANAI SABUROU |
分类号 |
H01L21/3065;H01J37/32;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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