发明名称 |
High etch rate method for plasma etching silicon nitride |
摘要 |
This invention is directed to a method for plasma etching difficult to etch materials at a high etch rate. The method is particularly useful in plasma etching silicon nitride layers more than five microns thick. The method includes a plasma formed by energy provided from two separate power sources and a gaseous mixture that includes only an etchant gas and a sputtering gas. The power levels from the separate power sources and the ratio between the flow rates of the etchant gas and a sputtering gas can be advantageously adjusted to obtain etch rates of silicon nitride greater than two microns per minute. Additionally, an embodiment of the method of the invention provides a two etch step process which combines a high etch rate process with a low etch rate process to achieve high throughput while minimizing the likelihood of damage to underlying layers. The first etch step of the two-step method provides a high etch rate of about two microns per minute to remove substantially all of a layer to be etched the. In the second step, a low etch rate process having an etch rate below about two microns per minute is used remove any residual material not removed by the first etch step.
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申请公布号 |
US2001019897(A1) |
申请公布日期 |
2001.09.06 |
申请号 |
US20010853847 |
申请日期 |
2001.05.11 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KUMAR AJAY;KHAN ANISUL;CHINN JEFFREY D.;PODLESNIK DRAGAN V. |
分类号 |
B81C1/00;H01L21/00;H01L21/3065;(IPC1-7):H01L21/302;C23F3/00;H01L21/461;C23F1/02 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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