Stacked capacitor memory structure which reduces short circuits due to dislodged hemispherical grains,申请号GB20000024095-传众专利搜索

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发明名称	Stacked capacitor memory structure which reduces short circuits due to dislodged hemispherical grains
摘要
申请公布号	GB2359926(A)	申请公布日期	2001.09.05
申请号	GB20000024095	申请日期	2000.10.02
申请人	* NEC CORPORATION	发明人	TOMOHIKO * HIGASHINO
分类号	H01L21/8242;H01L21/02;H01L27/108;(IPC1-7):H01L21/824	主分类号	H01L21/8242
代理机构		代理人
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