发明名称 |
MATERIAL FOR RAISING SINGLE CRYSTAL SIC AND METHOD OF PREPARING SINGLE CRYSTAL SIC |
摘要 |
According to the invention, a complex (M or M') formed by stacking in a closely contacted state a single crystal alpha -SiC base material (1) and a polycrystalline plate (2) which is produced into a plate-like shape by the CVD method with interposing an intermediate layer (4 or 4') containing Si and O as fundamental components, such as silicon rubber between opposing faces of the two members (1) and (2) in a laminated manner is heat-treated at a temperature of 2,200 DEG C or higher, and under a saturated SiC vapor pressure, thereby causing polycrystal members of the polycrystalline plate (3) to be transformed in a same direction as single crystal of the single crystal alpha -SiC base material (1) to integrally grow single crystal. Therefore, single crystal SiC of a high quality in which crystal defects and distortion are prevented from occurring and micropipe defects hardly occur can be produced easily and efficiently. <IMAGE> |
申请公布号 |
EP1130137(A1) |
申请公布日期 |
2001.09.05 |
申请号 |
EP19990933176 |
申请日期 |
1999.07.30 |
申请人 |
NISSIN ELECTRIC CO., LTD. |
发明人 |
TANINO, KICHIYA;HIRAMOTO, MASANOBU |
分类号 |
C30B23/00;C30B23/02;C30B25/00;C30B25/02 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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地址 |
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