发明名称 INTERMEDIATE BAND SEMICONDUCTOR PHOTOVOLTAIC SOLAR CELL
摘要 The invention relates to a solar cell containing a semiconductor (1) with an intermediate band (2) that is half filled with electrons, located between two layers of ordinary n type (3) and p type (4) semiconductors. When lighted, electron-hole pairs are formed either by a photon that absorbs the necessary energy (5) or by two photons (6,7) that absorb less energy which pump an electron from the valence band to the intermediate band (8) and from the latter to the conductance band (9). An electrical current is generated that exits on the p side and returns via the n side. The n and p layers also prevent the intermediate band from contacting the outer metal connections, which would have resulted in a short-circuit. Said cell converts solar energy into electricity in a more efficient manner than conventional cells and contributes to improvement of the photovoltaic devices. <IMAGE>
申请公布号 EP1130657(A2) 申请公布日期 2001.09.05
申请号 EP20000936909 申请日期 2000.06.09
申请人 UNIVERSIDAD POLITECNICA DE MADRID;UNIVERSIDAD AUTONOMA DE MADRID CIUDAD UNIVERSITARIA CANTOBLANCO;CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS 发明人 LUQUE LOPEZ, ANTONIO;FLORES SINTAS, FERNANDO;MARTI VEGA, ANTONIO;CONESA CEGARRA, JOSE CARLOS;WAHNON BENARROCH;ORTEGA MATEO ,JOSEAR;TABLERO CRESPO CESAR;PEREZ PEREZ RUBEN;CUADRA RODRIGEZ LUCAS A
分类号 H01L31/032;H01L31/0352;H01L31/06;(IPC1-7):H01L31/06 主分类号 H01L31/032
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