High speed modulation of semiconductor devices

摘要

A system and method for achieving high speed modulation of semi-conductor devices, such as VCSELs, utilizing field effect to confine a signal path is described. In semi-conductor devices operating at high data rates the configuration of connector rails and signal paths can become a limiting factor. The present invention provides an arrangement in which the signal return path is confined relative to the energizing signal path by a field effect in a common conductor extending under the signal path. <IMAGE>