SURFACE-EMISSION SEMICONDUCTOR LASER

摘要

Disclosed is a surface emitting semiconductor laser device capable of controlling transverse modes. A layer structure of a semiconductor material having a light-emitting layer provided between an upper reflector layer structure and a lower reflector layer structure is formed on a substrate, a part of the surface of the opening portion located above the upper reflector layer structure is coated with a transparent layer transparent to the oscillation wavelength of a laser beam such as a dielectric film, thereby forming a light-emerging window for the laser beam. The transverse modes of the laser beam can be controlled by changing the planar shape of the light-emerging window. <IMAGE>