| 摘要 |
The process of the invention is capable of providing conformably-aligned nanotubes perpendicular to the local surface of a flat or non-flat substrate, with an average deviation less than 15 DEG , while also allowing control over the nanotube diameter, length, and location. In particular, the invention uses a high frequency plasma enhanced chemical vapor deposition (PECVD), advantageously with an acetylene-ammonia chemistry, to provide such results, typically with cobalt as a catalyst metal. |
