| 发明名称 |
ABRASIVE COMPOSITION FOR POLISHING LSI DEVICE |
| 摘要 |
<p>A polishing-material composition, for polishing of LSI devices, which is a polishing-material composition comprising water and cerium oxide which has been surface-treated with a coupling agent, wherein the maximum value is no greater than 5 mu m and the average value is 0.01-1.0 mu m in the secondary particle size distribution of the cerium oxide. Also, a polishing method for LSI devices which employs the polishing-material composition.</p> |
| 申请公布号 |
EP1130630(A1) |
申请公布日期 |
2001.09.05 |
| 申请号 |
EP19990935076 |
申请日期 |
1999.08.05 |
| 申请人 |
SHOWA DENKO KABUSHIKI KAISHA |
发明人 |
KIDO, TAKANORI;TSUJINO, FUMIO;ICHIKAWA, KAGETAKA;UOTANI, NOBUO |
| 分类号 |
H01L21/306;C09G1/02;H01L21/304;C09K3/14;H01L21/3105;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/306 |
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