| 摘要 |
<p>A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains a polymer in combination with a dissolution inhibitor and a photoacid generator (PAG). The dissolution inhibitor is an aliphatic carboxylic acid derivative that has at least two acid labile groups and a third substituent that is either a hydrophilic moiety with an acid labile group, a saturated linear, branched, cyclic or alicyclic hydrocarbon moiety having no more than about 18 carbon atoms, an oxyalkyl moiety, a sulfur-containing moiety, a hydroxy moiety or a cyano moiety. The polymer optionally has acid labile groups pendant thereto which significantly decrease the solubility of the polymer in a solution of aqueous base. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.</p> |
