| 摘要 |
PROBLEM TO BE SOLVED: To provide a plating device having a film thickness gage which exactly measures the thicknesses of the films within the wiring grooves of a semiconductor substrate. SOLUTION: The thicknesses of the films within the wiring grooves of the semiconductor substrate 1 are measured with high accuracy by measuring the change in the resonance frequencies of a QCM 9 using a crystal oscillator formed on the same grooves as the grooves formed on the semiconductor substrate 1 on its surface. The oscillation stop of the crystal oscillator which is of a problem when the wiring grooves of a high aspect ration is plated by independently controlling the current supply time of the semiconductor substrate 1 and the QCM 9. Further, anode current is supplied to the crystal oscillator after plating by using a QCM plating power source 10, by which the plating layers are dissolved and the reuse of the crystal oscillator is made possible.
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