发明名称 Method to switch MOSFETs using recycled, parasitic energy
摘要 An energy efficient gate drive technique for binary push-pull MOSFET switching systems having a common switch node with inductive and capacitive elements connected to this common switch node. These energy storage elements on the common switch node can be parasitic in nature or discrete components. This technique recycles otherwise lost PMOS gate drive energy through the switch node, as a storage element, to the NMOS output FET.
申请公布号 US6285173(B1) 申请公布日期 2001.09.04
申请号 US20000588089 申请日期 2000.06.06
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 BENTOLILA ARIEL S.;SHEN SISAN
分类号 H03K17/06;H02M7/538;H03K17/00;H03K17/042;H03K17/687;H03K17/695;(IPC1-7):G05F1/40 主分类号 H03K17/06
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