发明名称 |
Method of manufacturing a flash memory cell having inter-poly-dielectric isolation |
摘要 |
A method of forming round corners for a gate oxide between a floating gate and a control gate of a memory cell comprises the steps of forming the floating gate over a tunnel oxide; forming a mask over the floating gate; forming rounded end caps adjacent distal ends of the mask; transferring the rounding of the end caps to top corners of the floating gate; forming the gate oxide over the floating gate; and, forming the control gate over the gate oxide. A memory cell having a rounded corner interface between the floating gate and control gate is also provided.
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申请公布号 |
US6284598(B1) |
申请公布日期 |
2001.09.04 |
申请号 |
US19990447893 |
申请日期 |
1999.11.23 |
申请人 |
AGERE SYSTEMS GUARDIAN CORP. |
发明人 |
KELLEY PATRICK J.;SINGH RANBIR;FRITZINGER LARRY B.;LEE CYNTHIA C.;MOLLOY JOHN SIMON |
分类号 |
H01L21/8247;H01L27/115;(IPC1-7):H01L31/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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