发明名称 Pattern data generating apparatus and method for inspecting defects in fine patterns in a photomask or semiconductor wafer
摘要 A pattern data development/generation apparatus includes a pattern generation circuit for obtaining a share of a target pattern in each square and outputting share data in reading pattern design data, decoding pattern data including a pattern shape, a pattern position and a pattern size, and assigning the decoded output data to the squares having an appropriate size as a unit, a pattern memory for holding a predetermined range of the share data generated by the pattern generation circuit, and a pattern memory readout circuit for reading out the share data of each square.
申请公布号 US6285783(B1) 申请公布日期 2001.09.04
申请号 US19970937156 申请日期 1997.09.25
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ISOMURA IKUNAO;TSUCHIYA HIDEO
分类号 G01B11/24;G01N21/88;G01N21/93;G01N21/956;G03F1/08;G06F17/50;G06T7/00;H01L21/82;(IPC1-7):G06K9/00 主分类号 G01B11/24
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