发明名称 METHOD FOR FORMING SILICON OXIDE COAT
摘要 PROBLEM TO BE SOLVED: To provide a method for improving a chemical resistance, especially alkali resistance of a silicon oxide coating film. SOLUTION: A gas mixture consisting of a silane or a siloxane with an alkyl or alkoxy group, ozone, one or more compounds of metals selected from tin, titan, zirconium and aluminum or/and an organic halide is brought into contact with a heated substrate in the manner of an atmospheric CVD, and as a result, the coating film containing 1-20 wt.% of the metal oxides or/and the halogen is formed on the substrate.
申请公布号 JP2001240430(A) 申请公布日期 2001.09.04
申请号 JP20000053280 申请日期 2000.02.29
申请人 CENTRAL GLASS CO LTD 发明人 WASEDA RYUTA
分类号 C03C17/245;C23C16/40;(IPC1-7):C03C17/245 主分类号 C03C17/245
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