摘要 |
PROBLEM TO BE SOLVED: To provide a method for improving a chemical resistance, especially alkali resistance of a silicon oxide coating film. SOLUTION: A gas mixture consisting of a silane or a siloxane with an alkyl or alkoxy group, ozone, one or more compounds of metals selected from tin, titan, zirconium and aluminum or/and an organic halide is brought into contact with a heated substrate in the manner of an atmospheric CVD, and as a result, the coating film containing 1-20 wt.% of the metal oxides or/and the halogen is formed on the substrate.
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