| 摘要 |
A drain electrode and a source electrode are provided for an intrinsic device section on a GaAs substrate with a gate electrode placed therebetween. Almost all or substantial parts of the GaAs substrate is covered by an extending source electrode extending from the source electrode. A belt-shaped extending drain electrode is provided on the extending source electrode with a dielectric layer placed therebetween, and thereby an output-side microstripline is formed. A belt-shaped extending gate electrode is also provided on the extending source electrode with a dielectric layer placed therebetween, and thereby an input-side microstripline is formed.
|
