| 摘要 |
A plasma polishing apparatus has a table which holds a wafer and is rotated at a high speed by a drive base. The drive base is supported on a horizontal drive stage, so that the table is linearly and reciprocally movable. A plasma generator for converting a process gas into a plasma by high-frequency inductive coupling is arranged above the table. The plasma generator has an outlet port from which the plasma flows out toward the target surface of the wafer. The plasma from the outlet port is drawn upon high-speed rotation of the wafer, diffused as a laminar flow on the target surface of the wafer, and uniformly polishes the entire target surface.
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