| 发明名称 |
Method and apparatus for producing a wafer |
| 摘要 |
A method and an apparatus for cutting a wafer from a crystalline ingot, by directing a stream or streams of etching gas at the crystalline ingot in a vacuum. Waste in cutting can be greatly minimized and the work environment can also be kept clean. Further, excellent surface smoothness can be realized on the cut wafers.
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| 申请公布号 |
US6284661(B1) |
申请公布日期 |
2001.09.04 |
| 申请号 |
US19970833125 |
申请日期 |
1997.04.04 |
| 申请人 |
DAIDO HOXAN INC. |
发明人 |
YOKOYAMA TAKASHI;YAMAMOTO KAZUMA;YAMAMOTO MASATO;MISHIMA TAKAHIRO;MATSUDA GO;ITOU SHIGEKI |
| 分类号 |
B26F3/00;B28D5/00;C30B33/00;H01L21/302;H01L21/304;(IPC1-7):B28D5/00;C30B33/12 |
主分类号 |
B26F3/00 |
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