| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon wafer with superior performance in gate oxidized film pressure resistance through easier and practical heat treatment. SOLUTION: When manufacturing a semiconductor needing a silicon surface which is superior in oxidized film pressure resistance, RTA surface treatment is performed for a short time to a silicon wafer with large size in COP, i.e., small density in LSTD. LSTD density can become small by adjusting speed of pulling-up crystal in the Czochralski method, which improves, despite of shorting the RTA treatment, the performance of oxidized film pressure resistance covering the depth of 50-75 nm from the surface.
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