| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology of preventing plasma from infiltrating in a vacuum treatment system to implement the plasma CVD method, etc. SOLUTION: A film forming apparatus 1 comprises a vacuum tank 2, a pedestal 3 which is arranged in the vacuum tank 2 and places a substrate 10 thereon, and conductive plates 301-304, and the conductive plates 301-304 electrically and directly connect the pedestal 3 to the vacuum tank 2. The conductive plates 301-304 are reduced in surface resistance due to the skin effect, and low in impedance to the high frequency voltage. By directly and electrically connecting the pedestal 3 to the vacuum tank 2 via the conductive plates 301-304 of low impedance, the vacuum tank 2 is substantially same in electric potential as the pedestal 3 even when the high frequency voltage is applied to an electrode 4 facing the pedestal 3, and the plasma is prevented from infiltrating the side or the back side of the pedestal 3, and stabilized.
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