CZ METHOD BASED, COOLER EQUIPPED SILICON SINGLE CRISTAL SILICON PULLING-UP DEVICE WITH IMPROVED EFFECT OF DEFECT DISPLACEMENT BY DASHNECK METHOD SILICON SINGLE CRYSTAL PULLING-UP DEVICE BASED ON CZ METHOD AND PROVIDED WITH COOLER, ENHANCED IN ELIMINATING DEFECT IN DASHNECK METHOD

摘要

PROBLEM TO BE SOLVED: To provide a CZ method based single crystal pulling-up device which is equipped with a cooler in a CZ furnace and is enable to smoothly dislocate a silicon seed crystal. SOLUTION: In this CZ method based single crystal pulling-up device, the cooler and a heat shelter are placed far from the surface of a melted solution in order to properly dislocate the silicon seed crystal in the dashneck method. This is based on the fact that the dislocation effect in the dashneck method is not obtained in a zone near to the cooler and the heat shelter.