THIN FILM FORMING APPARATUS

摘要

PROBLEM TO BE SOLVED: To form a high quality film at a high speed by effectively suppressing generation of particles. SOLUTION: In this thin film forming apparatus, a rotary electrode RE is disposed facing a substrate, plasma is generated between the substrate and the rotary electrode while rotating the rotary electrode RE, and a thin film is formed on a substrate by generating the chemical reaction by the plasma. Gas ejection units such as gas ejection holes 18b are provided in a circumferential surface of the rotary electrode RE. Generation of particles in the vicinity of the rotary electrode causing a trouble in forming an excellent thin film and formation of the thin film on the rotary electrode RE are suppressed by ejecting the purge gas which does not affect the chemical reaction.