| 摘要 |
The invention also relates to an a method of fabrication of an integrated circuit, the method includes altering a portion of a surface layer of a material to be polished and polishing the surface layer in a chemical mechanical polishing process. Preferably, the step of altering of the present invention includes adding an impurity to the material such as a dopant by heavy ion implantation at a concentration level of about 1x1010 ions/cm2 to about 1x1018 ions/cm2.
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