发明名称 |
Semiconductor structure with a dielectric layer and its producing method |
摘要 |
A semiconductor structure with a dielectric layer and its producing method are disclosed. The semiconductor structure includes a semiconductor substrate having thereon a plurality of metal lines and there are a plurality of concave regions formed between the metal lines. The dielectric layer is formed on the semiconductor by a method which can prevent the dielectric material from flowing into the concave regions. The method includes the steps of (a) providing a semiconductor substrate having thereon a plurality of metal lines forming therebetween a plurality of concave regions; and (b) forming the dielectric layer on the metal lines. The concave regions are only filled with air so that the capacitance of the semiconductor is lowered.
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申请公布号 |
US6284621(B1) |
申请公布日期 |
2001.09.04 |
申请号 |
US19990239000 |
申请日期 |
1999.01.27 |
申请人 |
NATIONAL SCIENCE COUNCIL |
发明人 |
CHANG KOW-MING;YANG JI-YI |
分类号 |
H01L21/768;(IPC1-7):H01L21/764 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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