Semiconductor device containing a porous structure and method of manufacturing the same

摘要

A semiconductor device and a method of manufacturing the same are provided with a silicon region of a first conductivity type, a silicon layer including at least one cavity existing inside the silicon region as a buried layer, and a source/drain region of a second conductivity type different from the first conductivity type selectively formed directly on an upper surface of the silicon region with a bottom surface of the source/drain region located adjacent to an upper surface of the silicon layer such that a depletion layer between the silicon region and the bottom surface of the source/drain region exists inside the silicon layer. With such a structure, a semiconductor device achieves a faster operation and lower power consumption while ensuring stable operation as a MOSFET.