发明名称 |
Method for anisotropic etching of silicon |
摘要 |
A method is proposed for anisotropic etching of micro- and nanofeatures in silicon substrates using independently controlled etching steps and polymer deposition steps which succeed one another alternatingly, the quantity of polymer deposited decreasing in the course of the polymer deposition steps, thus preventing any underetching of the micro- and nanofeatures.
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申请公布号 |
US6284148(B1) |
申请公布日期 |
2001.09.04 |
申请号 |
US19990284914 |
申请日期 |
1999.07.16 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
LAERMER FRANZ;SCHILP ANDREA |
分类号 |
H01L21/302;B81C1/00;H01L21/3065;(IPC1-7):B44C1/22;H01L21/00;C25F3/12 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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