Method for making field effect devices and capacitors with thin film dielectrics and resulting devices

摘要

An electronic device having an improved capacitor structure is formed by depositing a metal layer defining a first electrode on a film of high dielectric constant material, and then depositing the dielectric layer of the capacitor structure on the first electrode. This resulting structure is then exposed to a nitrogen plasma and the top electrode is formed. Exposing the first electrode to a plasma of pure nitrogen prevents the partial oxidation of the first electrode and reduces the density of charge traps at the electrode/dielectric interface. The dielectric film is passivated with the nitrogen material before forming the top electrode to prevent interdiffusion between the electrode and the dielectric.