| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for enhancing the chemical vapor deposition of titanium nitride from a titanium-containing precursor selected from the group consisting of tetrakis(dimethylamino)titanium, tetrakis(diethylamino)titanium and their mixture. SOLUTION: An organic amine like dipropylamine is added to the titanium- containing precursor in a range of about 10 ppm to 10 wt.%, more preferably 50 ppm to 1.0 wt.%, most preferably 100 ppm to 5,000 ppm by the mass of the titanium-containing precursor. Titanium nitride is formed by CVD. The addition of the small amount of the organic amine enhances the speed of the deposition.
|
