发明名称 |
Structure and method for fabricating a field effect transistor with a self-aligned anti-punchthrough implant channel |
摘要 |
A structure and method for fabricating a field effect transistor (FET) having improved drain to source punchthrough properties was achieved. The method utilizes the selective deposition of silicon oxide by a Liquid Phase Deposition (LPD) method to form a self-aligning implant mask. The mask is then used to implant a buried anti-punchthrough implant channel under and aligned to the gate electrode of the FET. The buried implant reduces the depletion width at the substrate to source/drain junction under the gate electrode but does not increase substantially the junction capacitance under the source/drain contacts, thereby improving punch-through characteristic while maintaining device performance.
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申请公布号 |
US6285061(B1) |
申请公布日期 |
2001.09.04 |
申请号 |
US19950429650 |
申请日期 |
1995.04.27 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
SHELL YAU-KAE;HONG GARY |
分类号 |
H01L21/336;(IPC1-7):H01L29/76;H01L29/94;H01L31/062 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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