发明名称 |
Positive-working chemical-amplification photoresist composition and method for forming a resist pattern using the same |
摘要 |
Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices and a method for forming a finely patterned resist layer therewith. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) tert-butyl (meth)acrylate units; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 1 to 10 carbon atoms as the anion such as diphenyliodonium trifluoromethane sulfonate.
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申请公布号 |
US6284430(B1) |
申请公布日期 |
2001.09.04 |
申请号 |
US20000657228 |
申请日期 |
2000.09.07 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
OOMORI KATSUMI;YUKAWA HIROTO;UCHIDA RYUSUKE;SATO KAZUFUMI |
分类号 |
G03F7/004;G03F7/039;H01L21/027;(IPC1-7):G03F7/004 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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