Method of forming a cobalt silicide layer by use of a TEOS through oxide film for ion-implantation process

摘要

A method of forming a cobalt silicide layer on a silicon region comprises the steps of: forming a TEOS oxide film on a surface of the silicon region; carrying out an ion-implantation process for implanting ions through the TEOS oxide film into the silicon region; carrying out a heat treatment to activate the ions implanted in the silicon region, whereby a silicidation reaction inhibitor layer concurrently formed on an interface between the TEOS oxide film and the surface of the silicon region; carrying out a dry etching to remove laminations of the TEOS oxide film and the silicidation reaction inhibitor layer from the surface of the silicon region; carrying out a cleaning process for cleaning the surface of the silicon region by subjecting the surface of the silicon region to an acidic solution and subsequently to a diluted hydrofluoric acid solution; and forming a cobalt silicide layer on the surface of the silicon region.