| 摘要 |
PURPOSE: A method for manufacturing a transistor is provided to easily form various kinds of patterns, by maximizing step coverage of a thin film as the transistor in size reduces. CONSTITUTION: The first etching mask is formed on a semiconductor substrate(30). A predetermined portion of the substrate not protected by the first etching mask is removed to form a gate sidewall spacer and a trench for forming a gate(360). A low density impurity ion-buried layer is formed in a lower portion of the trench. The first etching mask is removed. A sidewall spacer composed of an insulation material of a predetermined thickness is formed only on a side surface of the trench. Ions for a channel is implanted into the substrate in a lower portion of the exposed trench. A gate insulation layer is formed on the substrate in the lower portion of the exposed trench. A conductive layer is filled in the trench to form the gate. An interlayer dielectric(370) is formed on the substrate. The second etching mask exposing the surface of the interlayer dielectric located on the substrate is formed. The interlayer dielectric not protected by the second etching mask and a predetermined portion of the substrate are eliminated to form a pair of contact holes exposing the substrate. A high density impurity ion-buried layer is formed on the substrate in a lower portion of the exposed contact hole. The low and high density impurity ion-buried layers are diffused to form low and high impurity diffusion regions.
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