METHOD FOR MANUFACTURING BROADLY-PLANARIZED SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a broadly-planarized semiconductor device is provided to increase manufacturing yield, by preventing an upper electrode of a capacitor from being damaged by an excessive chemical mechanical polishing(CMP) process. CONSTITUTION: An interlayer dielectric and an etching stop layer(62) are sequentially formed on the entire surface of a high-stepped region having a capacitor and a low-stepped region adjacent to the high-stepped region. The upper end of the etching stop layer in the low-stepped region is not lower than at least the upper end of the capacitor. An insulation layer(64) is formed on the etching stop layer. A chemical mechanical etching process is performed until the etching stop layer on the low-stepped region is exposed. The remaining etching stop layer is eliminated.