| 摘要 |
PURPOSE: A method for manufacturing a pad of a semiconductor device is provided to improve reliability, by increasing tolerance regarding bonding pressure so that a pad is not peeled off and a plug is not short-circuited. CONSTITUTION: A field oxide layer(2) is separated by a predetermined interval to form a dummy substrate on a substrate(1). An interlayer dielectric(3) is deposited on the entire surface of the field oxide layer and the dummy substrate. A plurality of contact holes are formed in the interlayer dielectric to expose an upper portion of the plurality of field oxide layers. A plurality of the first plugs(8) located in the contact hole formed in the interlayer dielectric are formed. Metal is deposited on the first plug and the interlayer dielectric. A plurality of contact holes exposing a part of the interlayer dielectric located in an upper portion of the dummy substrate are formed. A lower metal layer(4) having the contact hole is formed. An intermetal dielectric(5) is deposited on the entire resultant structure. A contact hole is formed, and the intermetal dielectric filled in the contact hole formed in the loer metal layer is etched to expose a part of the lower metal layer which is an outer wall of the contact hole. The second plug(6) is formed in the contact hole formed in the intermetal dielectric. Metal is deposited on the second plug and the intermetal dielectric, and patterned to form an upper metal layer(7) connected to the lower metal layer through the second plug.
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