| 摘要 |
PURPOSE: An overlay pattern for measuring an overlay error is provided to prevent or reduce an invisible overlay error budget, by detecting a wafer-induced shift(WIS) when photoresist is patterned. CONSTITUTION: An outer box(21) has a space or width not greater than 1 micrometer. An inner box(22) of a matrix type which has a uniform gap and a step difference regarding the outer box, is formed inside the outer box. The size of the space is determined by the thickness of a deposited film, a deposition characteristic and the height of the step difference of the overlay pattern for measuring an overlay error.
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