METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE USING OZONE ANNEALING PROCESS

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device using an ozone annealing process is provided to improve a leakage current characteristic of the capacitor having a dielectric layer, by performing an initial stabilization process in a vacuum, O2 or O3 atmosphere. CONSTITUTION: A lower electrode is formed on a semiconductor substrate(100). A dielectric layer(122) having oxygen atoms as constitution atoms is formed on the lower electrode. Before the dielectric layer is annealed, a temperature is stabilized at the annealing temperature in a vacuum state and in an atmosphere having no nitrogen, or the temperature and pressure is stabilized at the annealing temperature and pressure in an oxygen or ozone atmosphere having no nitrogen. If the temperature is stabilized in a vacuum state, ozone is supplied and the pressure reaches the annealing pressure so that the dielectric layer is ultraviolet ozone-annealed or ozone-annealed. If the temperature and pressure is stabilized in an oxygen or ozone atmosphere, ozone is supplied for ultraviolet ozone-annealing process or ozone-annealing process. A heat treatment process is performed regarding the ozone-annealed dielectric layer in an oxygen atmosphere. An upper electrode(124) is formed on the annealed dielectric layer in the oxygen atmosphere.