METHOD FOR REMOVING SCRATCH IN SEMICONDUCTOR FABRICATING PROCESS

摘要

PURPOSE: A method for removing a scratch in a semiconductor fabricating process is provided to minimize defective such as a bridge of a metal wire formed on a layer insulation film by removing the scratch formed on the layer insulation film through a reflow. CONSTITUTION: A surface of a layer insulation film(24) is abrasive using an abrasion pad of a chemical-mechanical abrasion for smoothing the layer insulation film(24). A scratch(26) is generated in the surface of the abrasive layer insulation film(24). The scratch(26) causes defective such as a bridge of a metal wire formed on the layer insulation film(24). The layer insulation film(24) reflows in a high temperature. The reflow is executed in a temperature of 830°C for 30 minutes. The scratch(26) formed on the layer insulation film(24) is removed. The scratch(26) is removed by securing the flowability of BPSG(Boron Phosphorus Silicate Glass) for composing the layer insulation film(24).