| 摘要 |
PROBLEM TO BE SOLVED: To reduce cost without altering a conventional assembly process by changing the bump material from conventional Au to a more inexpensive material and providing the bump and the conductor lead with a metal film for bonding them stably. SOLUTION: An electrode pad 12 is formed on the surface of a semiconductor chip 10 and an electroless Ni plating bump 13 is formed thereon. The electroless Ni plating bumps 13 are arranged in two parallel rows on at least two opposite sides of the semiconductor chip 10. The electroless Ni plating bump 13 has height of 5 μm and Au plating 14 is applied, as a metal film, to the surface thereof. On the other hand, Sn plating 26 is applied to the surface of a conductor lead 25. The conductor lead 25 and the bump 11 are thermocompressed by means of a bonding tool 31 and bonded each other while forming an Au/Sn eutectic alloy 15. |
