OPTOELECTRONIC INTEGRATED CIRCUIT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To solve the problem in that the normal method for accessing a buried oxide layer through mesa etching complicates the next process step because of the thereby elevated level of the non-planarity of a wafer. SOLUTION: The optoelectronic integrated circuit comprises a first semiconductor device having a topmost surface and bottom surface, a second semiconductor device having a first surface, and at least one hole which is located between the bottom surface of the first semiconductor device and the first surface of the second semiconductor device and extends from the topmost surface to an oxidizable layer to gain entry. The etched cavity method provides easy means for forming electrically isolated regions between the devices in the optoelectronic integrated circuit.