| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To constitute a semiconductor device with lateral bipolar transistors having a performance equivalent to the longitudinal bipolar transistor. SOLUTION: A conductive film 50 formed by filling a conductive film in trenches reaching a buried oxide film 101 in an SOI substrate 100 is utilized for the emitter and/or collector to thereby constitute a bipolar transistor in a simple process.
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| 申请公布号 |
JP2001237249(A) |
申请公布日期 |
2001.08.31 |
| 申请号 |
JP20000048937 |
申请日期 |
2000.02.21 |
| 申请人 |
HITACHI LTD |
发明人 |
OYANAGI TAKASUMI;WATANABE TOKUO |
| 分类号 |
H01L21/328;H01L21/331;H01L21/8249;H01L21/84;H01L27/06;H01L27/10;H01L29/73;(IPC1-7):H01L21/331;H01L21/824 |
主分类号 |
H01L21/328 |
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