| 摘要 |
PROBLEM TO BE SOLVED: To provide a deposition method of a metallic compound thin film for depositing the metallic compound thin film free from metallic imperfect reactants at a high speed and to provide a deposition system therefor. SOLUTION: The method comprizes a stage in which a.c. voltage is applied in such a manner that, as to plural sputtering targets 29a, 29b, 49a and 49b, each target 29a, 29b, 49a and 49b is alternatively made into a cathode and an anode, and simultaneously, any target is made into a cathode, and any target is made into an anode at all times, inert gas and reactive gas are introduced, and a metallic imperfect reactant superthin film is deposited on a substrate at film deposition process zones 20 and 40 in a vacuum tank 11, a stage in which the metallic imperfect reactant superthin film is converted into a metallic compound superthin film with the active seed of electrically neutral reactive gas at a reaction process zone 60 in the vacuum tank 11 and a stage in which these two stages are repeatedly performed in succession.
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