发明名称 WRITING AND READING MEMORY AND METHOD FOR OPERATING THE SAME MEMORY
摘要 PROBLEM TO BE SOLVED: To operate a writing and reading memory alternately in one memory operation mode and an interleave multi-memory operation mode by reducing a required space to be occupied by a control element on a chip to the minimum. SOLUTION: A control line 45 connecting a control logic 33 to each memory cell of a cell field 31 is provided, and a selection signal sequence for an interleave multi-memory operation is supplied to the control line 45 when an operation mode signal 46 indicates an interleave multi-memory operation mode, and a mask signal sequence for a writing enable operation is supplied to the control line 45 when the operation mode signal 46 indicates one memory operation mode.
申请公布号 JP2001236264(A) 申请公布日期 2001.08.31
申请号 JP20010009222 申请日期 2001.01.17
申请人 INFINEON TECHNOLOGIES AG 发明人 POLNEY JENS
分类号 G06F12/06;G06F12/00;G06F12/04;G06F12/16;G11C7/10;(IPC1-7):G06F12/06 主分类号 G06F12/06
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