| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device whose mounting density is high and whose connection reliability with a side wiring board is high. SOLUTION: In a semiconductor device, a built-up multilayer wiring layer 8 is formed on a base substrate 7 having base substrate wiring layers 10 on a surface, first and second semiconductor modules 1 and 2 where semiconductor chips 3 are mounted are laminated and mounting density is improved. Wiring in the substrate is connected to the side wiring board through the built-up multilayer wiring layer. In the base substrate 7, connection reliability between the semiconductor module and the side wiring board can be improved since stress due to the difference of a thermal expansion coefficient between the side wiring board and the semiconductor module is small.</p> |
