| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric memory device which is advantageous to a higher integration. SOLUTION: On a silicon substrate 11, a silicon oxide film 12, polysilicon film 13, lower electrode film 14, ferroelectric film 15, and upper electrode film 16 are deposited in order. These films are etched using a common mask film 18 to form a gate structure section 20. Boron ions are implanted into the silicon substrate 11 self-alignedly with respect to the gate structure section 20. Then, the boron ions implanted into the silicon substrate 11 are activated by ramp annealing to form a pair of N type impurity diffusion layers 21, 22 and, at the same time, crystallize the ferroelectric film 15. As a result, manufacturing processes can be simplified.
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