| 摘要 |
PROBLEM TO BE SOLVED: To provide plasma treatment equipment wherein the so-called self bias phenomenon is maintained for evading abnormal discharge state of plasma gas at a gas jetting port and obtaining desired sputter effect, and control of a deposition film which is especially regarded as important in etching of an oxide film can be effectively performed. SOLUTION: A choke member 61 for choking a gas channel is inserted in the vicinity of a gas jetting port 13 of a gas supply pipe 51, a pressing member 71 is screwed in the upper stream side of the pipe 51, and the choke member 61 is stabilized. Trenches or holes which are turned into gas channels are formed on the surfaces or the insides of the choke member 61 and the pressing member 71. Consequently, the gas channel can be narrowly formed, so that plasma which is drawn by application of bias can be restrained, an abnormal discharge state at the gas jetting port can be prevented, the so-called self bias phenomenon is maintained, and a deposition film can be effectively controlled. It is unnecessary to narrow the gas supply pipe itself exceeding the needed level, and work is very easy since small trenches and holes are only formed on the choke member or the like. |
