| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that a detection mark cannot be seen and cannot be detected by the lithography of a gate electrode formation process when polysilicon, tungsten silicide, or the like is formed on the surface of a semiconductor substrate since a buried oxide film is buried in the groove for alignment of the semiconductor substrate for flattening the surface of the semiconductor substrate on the surface of the detection mark that is formed by a shallow trench element isolation process. SOLUTION: Merely an oxide film 5 that is deposited, in advance, in a groove 4 for alignment is selectively thinned with photo resist as a mask, thus preventing the region of the groove 4 for alignment from being flattened even in a flattening machining after that, and hence achieving an effective function as the mark for positioning of a process following after an element insulation and isolation process. |
