| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light-emitting element, where a semiconductor light-emitting element for stable control of a horizontal lateral mode is manufactured, using a simple process. SOLUTION: A p-type clad layer 15 and a p-side contact layer 16 are formed sequentially on an active layer 14, which are selectively ion-implanted with a material as that lowering the refractive index to form a low refractive-index region 17. A p-side electrode 18 is used as a mask for ion implantation to further simplify the process. |
